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Manufacturer Part #

ZXMN3G32DN8TA

Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated ZXMN3G32DN8TA - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.028Ω
Rated Power Dissipation: 1.25|W
Qg Gate Charge: 10.5nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
500
Multiple Of:
500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$177.50
USD
Quantity
Unit Price
500
$0.355
1,500
$0.35
2,500
$0.345
10,000
$0.335
15,000+
$0.33
Product Variant Information section